Research for Low-Application-Temperature, Electrically Conducting, Transparent Coatings For Aircraft Windshields and Related Components
Report Number: WADC TR 54-325 Part 2
Author(s): Schall, Paul, Jr., Mauk, Leonard H., Barrett, Robert E., Lougher, Edwin H., Olson, Earl R., Goering, Harvey L., Layer, Edwin H.
Corporate Author(s): Battelle Memorial Institute
Laboratory: Materials Laboratory
Date of Publication: 1956-03
Pages: 63
Contract: AF 33(616)-2467
DoD Project: 7312
DoD Task: 73125
Identifier: AD0095415
Abstract:
Transparent, conducting films of indium oxide on glass were prepared by thermal oxidation (at 250 to 400 deg F) of evaporated and sputtered indium films. Addition of tin to the films decrease their electrical resistance. Tin- doped films were prepared with resistance as low as 50 ohms per square and with optical transmittance of 75 to 80 per cent. The films are photoconductive. However, for the low resistance films (less than 100 ohms per square) the resistance changes only a few per cent when the films are light-dark cycled. The temperature coefficient of resistance of the films is less than +0.04 per cent per degree (F). Stability tests were conducted on the films under load (up to 1500 watts per square foot) and without load over a wide range of temperatures. Film resistance changes are less than 20 per cent in 150 hours.
Provenance: IIT
Author(s): Schall, Paul, Jr., Mauk, Leonard H., Barrett, Robert E., Lougher, Edwin H., Olson, Earl R., Goering, Harvey L., Layer, Edwin H.
Corporate Author(s): Battelle Memorial Institute
Laboratory: Materials Laboratory
Date of Publication: 1956-03
Pages: 63
Contract: AF 33(616)-2467
DoD Project: 7312
DoD Task: 73125
Identifier: AD0095415
Abstract:
Transparent, conducting films of indium oxide on glass were prepared by thermal oxidation (at 250 to 400 deg F) of evaporated and sputtered indium films. Addition of tin to the films decrease their electrical resistance. Tin- doped films were prepared with resistance as low as 50 ohms per square and with optical transmittance of 75 to 80 per cent. The films are photoconductive. However, for the low resistance films (less than 100 ohms per square) the resistance changes only a few per cent when the films are light-dark cycled. The temperature coefficient of resistance of the films is less than +0.04 per cent per degree (F). Stability tests were conducted on the films under load (up to 1500 watts per square foot) and without load over a wide range of temperatures. Film resistance changes are less than 20 per cent in 150 hours.
Provenance: IIT