Semiconductor Diode Performance in Nuclear Radiation Environments

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Report Number: ASD TDR 62-12
Author(s): Hamre, Harlan G., McElroy, William N., Barrell, Raymond C.
Corporate Author(s): Armour Research Foundation
Laboratory: Deputy Commander for Test and Support
Date of Publication: 1962-05
Pages: 86
Contract: AF 33(616)-7329
DoD Project: 1448
DoD Task: 42023
Identifier: AD0281796

Performance characteristics were determined for two types of general purpose diodes, and for five types of microwave diodes, in radiation environments equivalent to at least 1000 hours' exposure to 10 to the 10th neutron/sq cm-sec and 2 times 10 to the 5th Rad/hour. None of the units studied showed satisfactory performance characteristics after this exposure, although the germanium 1N263 point-contact diode was degraded less than others investigated, and still exhibited measurable properties following the exposure. Results, although not conclusive, seem to indicate that energizing the microwave mixers at X-band (9375 Mc) during radiation is helpful in prolonging the life of the units.

Provenance: Lockheed Martin Missiles & Fire Control

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