Radiation Effects On Semiconductor Catalysts

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Report Number: ASD TDR 62-233
Author(s): Sosnovosky, H.C.
Corporate Author(s): Armour Research Foundation
Laboratory: Directorate of Materials and Processes
Date of Publication: 1962-10
Pages: 33
Contract: AF 33(616)-7740
DoD Project: 7360
DoD Task: 736003
Identifier: AD0291844
AD Number: AD-291 844

The effect of ion bombardment on carrier lifetime, photoconductivity, and surface structure of germanium (111) crystals was investigated after bombardment at voltages between 10 and 2000 v. It was found that the lifetime decreased significantly at bombarding voltages above 80 v and that the number of defects in the surface region increased simultaneously by several orders of magnitudes. These defects are most likely dislocations and vacancy clusters. Less stable defects were introduced at very low bombarding voltages but these too were found to affect the electrical properties of the bombarded surfaces appreciably. Preliminary results of the effect of absorbed gasses on the properties of ion bombarded surfaces, and the effect of neutron bombardment on the catalytic exchange of hydrogen with deuterium on etched surfaces are included.

Provenance: Lockheed Martin Missiles & Fire Control

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