L-Band Amplifier Design from Two-Port Parameters

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Report Number: ECOM-2588
Author(s): Gelnovatch, V., Hambleton, G. E.
Corporate Author(s): U.S. Army Electronics Laboratories
Laboratory: U.S. Army Electronics Laboratories
Date of Publication: 1965-04
Pages: 30
Contract: Laboratory Research - No Contract
DoD Task:
Identifier: AD0617373

Abstract:
Transistors now possess the capability to operate in the L-band region. This report describes an amplifier design using y-parameters measured at the design frequency and the fabrication of a laboratory amplifier model. Design calculations and performance data are presented.

Provenance: IIT

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