Lattice Defects in Germanium and Silicon and Their Effect on Electrical Properties

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Report Number: AFOSR-TN-57-78
Author(s): Copeland, P. L., Madigan, J. R., Fiegel, L. J.
Corporate Author(s): Illinois Inst. of Tech. Lab. of Physical Electronics
Date of Publication: 1957-02-15
Contract: AF 18(600)643
DoD Task:
Identifier: AD0120422
AD Number: AD 120422

The equilibrium barrier height of a p-n junction rectifier was measured as a function of temperature from 77° to 373°. The barrier height was determined by observing the saturation of the open circuit junction decays voltage with increasing forward bias. The height of the barrier at a given temperature is equal to the original difference in Fermi levels in the isolated n- and p- regions of the diode. At low temperatures it should, therefore, approach the energy gap and should tend to zero at high temperatures as both regions approach intrinsic material. Measurements on silicon alloy junction diodes are in general agreement with this predicted behavior and because of the heavy doping of the emitter essentially describe the behavior of the Fermi level in the base region.

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